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CY7C1338G
4-Mbit (128K x 32) Flow-Through Sync SRAM
Features
* 128K x 32 common I/O * 3.3V core power supply (VDD) * 2.5V or 3.3V I/O supply (VDDQ) * Fast clock-to-output times -- 6.5 ns (133-MHz version) * Provide high-performance 2-1-1-1 access rate * User-selectable burst counter supporting Intel(R) Pentium(R) interleaved or linear burst sequences * Separate processor and controller address strobes * Synchronous self-timed write * Asynchronous output enable * Offered in lead-free 100-Pin TQFP package, lead-free and non-lead-free 119-Ball BGA package * "ZZ" Sleep Mode option
Functional Description[1]
The CY7C1338G is a 128K x 32 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the first address in a burst and increments the address automatically for the rest of the burst access. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2 and CE3), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables (BW[A:D], and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin. The CY7C1338G allows either interleaved or linear burst sequences, selected by the MODE input pin. A HIGH selects an interleaved burst sequence, while a LOW selects a linear burst sequence. Burst accesses can be initiated with the Processor Address Strobe (ADSP) or the cache Controller Address Strobe (ADSC) inputs. Address advancement is controlled by the Address Advancement (ADV) input. Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor (ADSP) or Address Strobe Controller (ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the Advance pin (ADV). The CY7C1338G operates from a +3.3V core power supply while all outputs may operate with either a +2.5 or +3.3V supply. All inputs and outputs are JEDEC-standard JESD8-5-compatible.
Logic Block Diagram
A0, A1, A
ADDRESS REGISTER A[1:0]
MODE
ADV CLK
BURST Q1 COUNTER AND LOGIC Q0 CLR
ADSC ADSP DQD BYTE BWD WRITE REGISTER DQD BYTE WRITE REGISTER
BWC
DQC BYTE WRITE REGISTER
DQC BYTE WRITE REGISTER
DQB BYTE BWB DQB BYTE WRITE REGISTER DQA BYTE BWA BWE GW CE1 CE2 CE3 OE DQA BYTE WRITE REGISTER WRITE REGISTER WRITE REGISTER
MEMORY ARRAY
SENSE AMPS
OUTPUT BUFFERS
DQs
ENABLE REGISTER
INPUT REGISTERS
ZZ
SLEEP CONTROL
Note: 1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Cypress Semiconductor Corporation Document #: 38-05521 Rev. *D
*
198 Champion Court
*
San Jose, CA 95134-1709 * 408-943-2600 Revised July 5, 2006
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CY7C1338G
Selection Guide
Maximum Access Time Maximum Operating Current Maximum Standby Current 133 MHz 6.5 225 40 100 MHz 8.0 205 40 Unit ns mA mA
Pin Configurations
100-Pin TQFP Pinout
BWD BWC BWB BWA CE3 CE1 VDD VSS OE ADSC ADSP ADV 86 85 84 83 CE2 CLK GW A BWE A 82 A A 81
99
98
97
96
95
94
93
92
91
90
89
88
NC DQC DQC VDDQ VSSQ DQC DQC BYTE C DQC DQC VSSQ VDDQ DQC DQC NC VDD NC VSS DQD DQD VDDQ VSSQ DQD DQD DQD DQD VSSQ VDDQ DQD DQD NC
BYTE D
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37
100
87
CY7C1338G
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 44 45 46 47 48 49 50
NC DQB DQB VDDQ VSSQ DQB DQB DQB DQB VSSQ VDDQ DQB DQB VSS NC VDD ZZ DQA DQA VDDQ VSSQ DQA DQA DQA DQA VSSQ VDDQ DQA DQA NC BYTE B
BYTE A
38
39
40
41 VDD
42 NC/18M
NC/72M NC/36M
MODE A
NC/9M
A1
A0
VSS
A
A
A
43
A A
A
A
A A
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CY7C1338G
Pin Configurations (continued) 119-Ball BGA Pinout
1 A B C D E F G H J K L M N P R T U VDDQ NC/288M NC/144M DQC DQC VDDQ DQC DQC VDDQ DQD DQD VDDQ DQD DQD NC NC VDDQ 2 A CE2 A NC DQC DQC DQC DQC VDD DQD DQD DQD DQD NC A NC/72M NC 3 A A A VSS VSS VSS BWC VSS NC VSS BWD VSS VSS VSS MODE A NC 4 ADSP ADSC VDD NC CE1 OE ADV GW VDD CLK NC BWE A1 A0 VDD A NC 5 A A A VSS VSS VSS BWB VSS NC VSS BWA VSS VSS VSS NC A NC 6 A 7 VDDQ
NC/9M NC/576M A NC/1G NC DQB DQB DQB DQB VDD DQA DQA DQA DQA NC A NC/36M NC DQB DQB VDDQ DQB DQB VDDQ DQA DQA VDDQ DQA DQA NC ZZ VDDQ
Pin Definitions
Name A0, A1, A I/O Description InputAddress Inputs used to select one of the 128K address locations. Sampled at the rising edge Synchronous of the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 are sampled active. A[1:0] feed the 2-bit counter. InputByte Write Select Inputs, active LOW. Qualified with BWE to conduct byte writes to the SRAM. Synchronous Sampled on the rising edge of CLK. InputGlobal Write Enable Input, active LOW. When asserted LOW on the rising edge of CLK, a global Synchronous write is conducted (ALL bytes are written, regardless of the values on BW[A:D] and BWE). InputByte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal must be Synchronous asserted LOW to conduct a byte write. Input-Clock Clock Input. Used to capture all synchronous inputs to the device. Also used to increment the burst counter when ADV is asserted LOW, during a burst operation. InputChip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with Synchronous CE2 and CE3 to select/deselect the device. ADSP is ignored if CE1 is HIGH. CE1 is sampled only when a new external address is loaded. InputChip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with Synchronous CE1 and CE3 to select/deselect the device. CE2 is sampled only when a new external address is loaded. InputChip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with Synchronous CE1 and CE2 to select/deselect the device. CE3 is sampled only when a new external address is loaded. InputOutput Enable, asynchronous input, active LOW. Controls the direction of the I/O pins. When Asynchronous LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input data pins. OE is masked during the first clock of a read cycle when emerging from a deselected state. InputAdvance Input signal, sampled on the rising edge of CLK. When asserted, it automatically Synchronous increments the address in a burst cycle.
BWA, BWB BWC, BWD GW BWE CLK CE1
CE2
CE3
OE
ADV
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CY7C1338G
Pin Definitions (continued)
Name ADSP I/O Description InputAddress Strobe from Processor, sampled on the rising edge of CLK, active LOW. When Synchronous asserted LOW, addresses presented to the device are captured in the address registers. A[1:0] are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE1 is deasserted HIGH InputAddress Strobe from Controller, sampled on the rising edge of CLK, active LOW. When asserted Synchronous LOW, addresses presented to the device are captured in the address registers. A[1:0] are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. InputZZ "sleep" Input, active HIGH. When asserted HIGH places the device in a non-time-critical "sleep" Asynchronous condition with data integrity preserved. During normal operation, this pin has to be low or left floating. ZZ pin has an internal pull-down. I/OBidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered by Synchronous the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by the addresses presented during the previous clock rise of the read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs are placed in a tri-state condition. Power Supply Ground Power supply inputs to the core of the device. Ground for the core of the device.
ADSC
ZZ
DQs
VDD VSS VDDQ VSSQ MODE
I/O Power Power supply for the I/O circuitry. Supply I/O Ground Ground for the I/O circuitry. InputStatic Selects Burst Order. When tied to GND selects linear burst sequence. When tied to VDD or left floating selects interleaved burst sequence. This is a strap pin and should remain static during device operation. Mode Pin has an internal pull-up. No Connects. Not Internally connected to the die. - No Connects. Not internally connected to the die. NC/9M,NC/18M,NC/36M,NC/72M, NC/144M, NC/288M, NC/576M and NC/1G are address expansion pins that are not internally connected to the die.
NC NC/9M, NC/18M NC/36M NC/72M, NC/144M, NC/288M, NC/576M, NC/1G
Functional Overview
All synchronous inputs pass through input registers controlled by the rising edge of the clock. Maximum access delay from the clock rise (t C0) is 6.5 ns (133-MHz device). The CY7C1338G supports secondary cache in systems utilizing either a linear or interleaved burst sequence. The interleaved burst order supports Pentium and i486TM processors. The linear burst sequence is suited for processors that utilize a linear burst sequence. The burst order is user-selectable, and is determined by sampling the MODE input. Accesses can be initiated with either the Processor Address Strobe (ADSP) or the Controller Address Strobe (ADSC). Address advancement through the burst sequence is controlled by the ADV input. A two-bit on-chip wraparound burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access. Byte write operations are qualified with the Byte Write Enable (BWE) and Byte Write Select (BW[A:D]) inputs. A Global Write
Enable (GW) overrides all byte write inputs and writes data to all four bytes. All writes are simplified with on-chip synchronous self-timed write circuitry. Three synchronous Chip Selects (CE1, CE2, CE3) and an asynchronous Output Enable (OE) provide for easy bank selection and output tri-state control. ADSP is ignored if CE1 is HIGH. Single Read Accesses A single read access is initiated when the following conditions are satisfied at clock rise: (1) CE1, CE2, and CE3 are all asserted active, and (2) ADSP or ADSC is asserted LOW (if the access is initiated by ADSC, the write inputs must be deasserted during this first cycle). The address presented to the address inputs is latched into the address register and the burst counter/control logic and presented to the memory core. If the OE input is asserted LOW, the requested data will be available at the data outputs a maximum to tCDV after clock rise. ADSP is ignored if CE1 is HIGH.
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CY7C1338G
Single Write Accesses Initiated by ADSP This access is initiated when the following conditions are satisfied at clock rise: (1) CE1, CE2, CE3 are all asserted active, and (2) ADSP is asserted LOW. The addresses presented are loaded into the address register and the burst inputs (GW, BWE, and BW[A:D])are ignored during this first clock cycle. If the write inputs are asserted active (see Write Cycle Descriptions table for appropriate states that indicate a write) on the next clock rise, the appropriate data will be latched and written into the device. Byte writes are allowed. During byte writes, BWA controls DQA and BWB controls DQB. BWC controls DQC, and BWD controls DQD. All I/Os are tri-stated during a byte write.Since this is a common I/O device, the asynchronous OE input signal must be deasserted and the I/Os must be tri-stated prior to the presentation of data to DQs. As a safety precaution, the data lines are tri-stated once a write cycle is detected, regardless of the state of OE. Single Write Accesses Initiated by ADSC This write access is initiated when the following conditions are satisfied at clock rise: (1) CE1, CE2, and CE3 are all asserted active, (2) ADSC is asserted LOW, (3) ADSP is deasserted HIGH, and (4) the write input signals (GW, BWE, and BW[A:D]) indicate a write access. ADSC is ignored if ADSP is active LOW. The addresses presented are loaded into the address register and the burst counter/control logic and delivered to the memory core. The information presented to DQ[A:D] will be written into the specified address location. Byte writes are allowed. During byte writes, BWA controls DQA, BWB controls DQB, BWC controls DQC, and BWD controls DQD. All I/Os are tri-stated when a write is detected, even a byte write. Since this is a common I/O device, the asynchronous OE input signal must be deasserted and the I/Os must be tri-stated prior to the presentation of data to DQs. As a safety precaution, the data lines are tri-stated once a write cycle is detected, regardless of the state of OE. Burst Sequences The CY7C1338G provides an on-chip two-bit wraparound burst counter inside the SRAM. The burst counter is fed by A[1:0], and can follow either a linear or interleaved burst order. The burst order is determined by the state of the MODE input. A LOW on MODE will select a linear burst sequence. A HIGH on MODE will select an interleaved burst order. Leaving MODE unconnected will cause the device to default to a interleaved burst sequence. Sleep Mode The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation "sleep" mode. Two clock cycles are required to enter into or exit from this "sleep" mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the "sleep" mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the "sleep" mode. CEs, ADSP, and ADSC must remain inactive for the duration of tZZREC after the ZZ input returns LOW.
Interleaved Burst Address Table (MODE = Floating or VDD)
First Address A1, A0 00 01 10 11 Second Address A1, A0 01 00 11 10 Third Address A1, A0 10 11 00 01 Fourth Address A1, A0 11 10 01 00
Linear Burst Address Table (MODE = GND)
First Address A1, A0 00 01 10 11 Second Address A1, A0 01 10 11 00 Third Address A1, A0 10 11 00 01 Fourth Address A1, A0 11 00 01 10
ZZ Mode Electrical Characteristics
Parameter IDDZZ tZZS tZZREC tZZI tRZZI Description Sleep mode standby current Device operation to ZZ ZZ recovery time ZZ active to sleep current ZZ Inactive to exit sleep current Test Conditions ZZ > VDD - 0.2V ZZ > VDD - 0.2V ZZ < 0.2V This parameter is sampled This parameter is sampled 0 2tCYC 2tCYC Min. Max. 40 2tCYC Unit mA ns ns ns ns
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CY7C1338G
Truth Table [2, 3, 4, 5, 6]
Cycle Description Deselected Cycle, Power-down Deselected Cycle, Power-down Deselected Cycle, Power-down Deselected Cycle, Power-down Deselected Cycle, Power-down Sleep Mode, Power-down Read Cycle, Begin Burst Read Cycle, Begin Burst Write Cycle, Begin Burst Read Cycle, Begin Burst Read Cycle, Begin Burst Read Cycle, Continue Burst Read Cycle, Continue Burst Read Cycle, Continue Burst Read Cycle, Continue Burst Write Cycle, Continue Burst Write Cycle, Continue Burst Read Cycle, Suspend Burst Read Cycle, Suspend Burst Read Cycle, Suspend Burst Read Cycle, Suspend Burst Write Cycle, Suspend Burst Write Cycle, Suspend Burst Address Used CE1 CE2 CE3 ZZ ADSP ADSC ADV WRITE OE CLK None None None None None None External External External External External Next Next Next Next Next Next Current Current Current Current Current Current H L L L X X L L L L L X X H H X H X X H H X H X L X L X X H H H H H X X X X X X X X X X X X X X H X X X L L L L L X X X X X X X X X X X X L L L L L H L L L L L L L L L L L L L L L L L X L L H H X L L H H H H H X X H X H H X X H X L X X L L X X X L L L H H H H H H H H H H H H X X X X X X X X X X X L L L L L L H H H H H H X X X X X X X X L H H H H H H L L H H H H L L X X X X X X L H X L H L H L H X X L H L H X X DQ
L-H Tri-State L-H Tri-State L-H Tri-State L-H Tri-State L-H Tri-State X L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H Tri-State Q D Q Q Q D D Q Q D D
L-H Tri-State
L-H Tri-State L-H Tri-State L-H Tri-State
L-H Tri-State L-H Tri-State
Notes: 2. X = "Don't Care." H = Logic HIGH, L = Logic LOW. 3. WRITE = L when any one or more Byte Write enable signals (BWA, BWB, BWC, BWD) and BWE = L or GW= L. WRITE = H when all Byte write enable signals (BWA, BWB, BWC, BWD), BWE, GW = H. 4. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock. 5. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX. Writes may occur only on subsequent clocks after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a don't care for the remainder of the write cycle. 6. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
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CY7C1338G
Partial Truth Table for Read/Write[2, 7]
Function Read Read Write Byte A Write Byte B Write Bytes B, A Write Byte C Write Bytes C, A Write Bytes C, B Write Bytes C, B, A Write Byte D Write Bytes D, A Write Bytes D, B Write Bytes D, B, A Write Bytes D, B Write Bytes D, B, A Write Bytes D, C, A Write All Bytes Write All Bytes GW H H H H H H H H H H H H H H H H H L BWE H L L L L L L L L L L L L L L L L X BWD X H H H H H H H H L L L L L L L L X BWC X H H H H L L L L H H H H L L L L X BWB X H H L L H H L L H H L L H H L L X BWA X H L H L H L H L H L H L H L H L X
Note: 7. Table only lists a partial listing of the byte write combinations. Any combination of BWX is valid. Appropriate write will be done based on which byte write is active.
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CY7C1338G
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. -65C to +150C Ambient Temperature with Power Applied............................................. -55C to +125C Supply Voltage on VDD Relative to GND........ -0.5V to +4.6V Supply Voltage on VDDQ Relative to GND ...... -0.5V to +VDD DC Voltage Applied to Outputs in tri-state ............................................ -0.5V to VDDQ + 0.5V Range Commercial Industrial DC Input Voltage ................................... -0.5V to VDD + 0.5V Current into Outputs (LOW)......................................... 20 mA Static Discharge Voltage........................................... >2001V (per MIL-STD-883, Method 3015) Latch-up Current..................................................... >200 mA
Operating Range
Ambient Temperature] 0C to +70C -40C to +85C VDD VDDQ
3.3V -5%/+10% 2.5V -5% to VDD
Electrical Characteristics Over the Operating Range [8, 9]
Parameter VDD VDDQ VOH VOL VIH VIL IX Description Power Supply Voltage I/O Supply Voltage Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage[8] for 3.3V I/O, IOH = -4.0 mA for 2.5V I/O, IOH = -1.0 mA for 3.3V I/O,IOL = 8.0 mA for 2.5V I/O, IOL = 1.0 mA for 3.3V I/O for 2.5V I/O for 3.3V I/O for 2.5V I/O Input Leakage Current except ZZ and MODE GND VI VDDQ 2.0 1.7 -0.3 -0.3 -5 -30 5 -5 30 -5 5 225 205 90 80 40 7.5-ns cycle, 133 MHz 10-ns cycle, 100 MHz Test Conditions Min. 3.135 2.375 2.4 2.0 0.4 0.4 VDD + 0.3V VDD + 0.3V 0.8 0.7 5 Max. 3.6 VDD Unit V V V V V V V V V V A A A A A A mA mA mA mA mA
Input Current of MODE Input = VSS Input = VDD Input Current of ZZ IOZ IDD ISB1 Input = VSS Input = VDD Output Leakage Current GND VI VDDQ, Output Disabled VDD Operating Supply Current Automatic CE Power-Down Current--TTL Inputs VDD = Max., IOUT = 0 mA, f = fMAX= 1/tCYC
Max. VDD, Device Deselected, 7.5-ns cycle, 133 MHz VIN VIH or VIN VIL, f = fMAX, 10-ns cycle, 100 MHz inputs switching
ISB2
Automatic CE Max. VDD, Device Deselected, All speeds Power-Down VIN VDD - 0.3V or VIN 0.3V, Current--CMOS Inputs f = 0, inputs static Automatic CE Max. VDD, Device Deselected, 7.5-ns cycle, 133 MHz Power-Down VIN VDDQ - 0.3V or VIN 10-ns cycle, 100 MHz Current--CMOS Inputs 0.3V, f = fMAX, inputs switching Automatic CE Power-Down Current--TTL Inputs Max. VDD, Device Deselected, All speeds VIN VDD - 0.3V or VIN 0.3V, f = 0, inputs static
ISB3
75 65 45
mA mA mA
ISB4
Notes: 8. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > -2V (Pulse width less than tCYC/2). 9. TPower-up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
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CY7C1338G
Capacitance[10]
Parameter CIN CCLK CI/O Description Input Capacitance Clock Input Capacitance Input/Output Capacitance Test Conditions TA = 25C, f = 1 MHz, VDD = 3.3V. VDDQ = 3.3V 100 TQFP Max. 5 5 5 119 BGA Max. 5 5 7 Unit pF pF pF
Thermal Resistance[10]
Parameter JA JC Description Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Case) Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51. 100 TQFP Package 30.32 6.85 119 BGA Package 34.1 14.0 Unit C/W C/W
AC Test Loads and Waveforms
3.3V I/O Test Load
OUTPUT Z0 = 50 3.3V OUTPUT RL = 50 5 pF R = 351 R = 317 ALL INPUT PULSES VDDQ 10% GND 1 ns 90% 90% 10% 1 ns
VT = 1.5V
2.5V I/O Test Load
OUTPUT Z0 = 50
(a)
INCLUDING JIG AND SCOPE 2.5V
(b)
R = 1667 VDDQ 10%
(c)
ALL INPUT PULSES 90% 90% 10% 1ns
OUTPUT RL = 50 5 pF R =1538 VT = 1.25V INCLUDING JIG AND SCOPE
GND 1ns
(a)
(b)
(c)
Note: 10. Tested initially and after any design or process change that may affect these parameters.
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CY7C1338G
Switching Characteristics Over the Operating Range [11, 12, 13, 14, 15, 16]
-133 Parameter tPOWER Clock tCYC tCH tCL Output Times tCDV tDOH tCLZ tCHZ tOEV tOELZ tOEHZ Setup Times tAS tADS tADVS tWES tDS tCES Hold Times tAH tADH tWEH tADVH tDH tCEH Address Hold After CLK Rise ADSP, ADSC Hold After CLK Rise GW, BWE, BWX Hold After CLK Rise ADV Hold After CLK Rise Data Input Hold After CLK Rise Chip Enable Hold After CLK Rise 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ns ns ns ns ns ns Address Set-up Before CLK Rise ADSP, ADSC Set-up Before CLK Rise ADV Set-up Before CLK Rise GW, BWE, BWX Set-up Before CLK Rise Data Input Set-up Before CLK Rise Chip Enable Set-up 1.5 1.5 1.5 1.5 1.5 1.5 2.0 2.0 2.0 2.0 1.5 2.0 ns ns ns ns ns ns Data Output Valid After CLK Rise Data Output Hold After CLK Rise Clock to Low-Z
[12, 13, 14]
-100 Min. 1 10 4.0 4.0 6.5 8.0 2.0 0 3.5 3.5 3.5 3.5 0 3.5 3.5 Max. Unit ms ns ns ns ns ns ns ns ns ns ns
Description VDD(Typical) to the first Access Clock Cycle Time Clock HIGH Clock LOW
[11]
Min. 1 7.5 2.5 2.5
Max.
2.0 0
Clock to High-Z[12, 13, 14] OE LOW to Output Valid OE LOW to Output Low-Z[12, 13, 14]
[12, 13, 14]
0
OE HIGH to Output High-Z
Notes: 11. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially before a read or write operation can be initiated. 12. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured 200 mV from steady-state voltage. 13. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z prior to Low-Z under the same system conditions. 14. This parameter is sampled and not 100% tested. 15. Timing reference level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V. 16. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
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CY7C1338G
Timing Diagrams
Read Cycle Timing[17]
tCYC
CLK
t
CH
t CL
tADS
tADH
ADSP
tADS tADH
ADSC
tAS tAH
ADDRESS
A1
t WES t WEH
A2
GW, BWE,BW
[A:D] tCES t CEH
Deselect Cycle
CE
t ADVS t ADVH
ADV ADV suspends burst. OE
t OEV t CLZ t OEHZ t OELZ
tCDV tDOH t CHZ
Data Out (Q)
High-Z
Q(A1)
t CDV
Q(A2)
Q(A2 + 1)
Q(A2 + 2)
Q(A2 + 3)
Q(A2)
Q(A2 + 1)
Q(A2 + 2)
Burst wraps around to its initial state
Single READ DON'T CARE
BURST READ UNDEFINED
Note: 17. On this diagram, when CE is LOW: CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH: CE1 is HIGH or CE2 is LOW or CE3 is HIGH.
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Timing Diagrams (continued)
Write Cycle Timing[17, 18]
t CYC
CLK
t
CH
t
CL
tADS
tADH
ADSP
tADS tADH
ADSC extends burst
tADS tADH
ADSC
tAS tAH
ADDRESS
A1
A2
Byte write signals are ignored for first cycle when ADSP initiates burst
A3
tWES tWEH
BWE, BW[A:D]
t t WES WEH
GW
tCES tCEH
CE
tADVS tADVH
ADV
ADV suspends burst
OE
t DS t DH D(A2) D(A2 + 1) D(A2 + 1) D(A2 + 2) D(A2 + 3) D(A3) D(A3 + 1) D(A3 + 2)
Data in (D)
High-Z
t OEHZ
D(A1)
Data Out (Q) BURST READ Single WRITE BURST WRITE Extended BURST WRITE
DON'T CARE
UNDEFINED
Note: 18. Full width write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BW[A:D] LOW.
Document #: 38-05521 Rev. *D
Page 12 of 17
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CY7C1338G
Timing Diagrams (continued)
Read/Write Timing[17, 19, 20]
tCYC
CLK
t CH tADS tADH
t CL
ADSP
ADSC
tAS tAH
ADDRESS
A1
A2
A3
t t WES WEH
A4
A5
A6
BWE, BW[A:D]
tCES tCEH
CE
ADV
OE
tDS tDH tOELZ
Data In (D) Data Out (Q)
High-Z
t OEHZ
D(A3)
tCDV
D(A5)
D(A6)
Q(A1)
Q(A2) Single WRITE DON'T CARE
Q(A4)
Q(A4+1)
Q(A4+2)
Q(A4+3) Back-to-Back WRITEs
Back-to-Back READs
BURST READ UNDEFINED
Notes: 19. The data bus (Q) remains in high-Z following a WRITE cycle, unless a new read access is initiated by ADSP or ADSC. 20. GW is HIGH.
Document #: 38-05521 Rev. *D
Page 13 of 17
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CY7C1338G
Timing Diagrams (continued)
ZZ Mode Timing [21, 22]
CLK
t ZZ t ZZREC
ZZ
t ZZI
I
SUPPLY I DDZZ t RZZI DESELECT or READ Only
ALL INPUTS (except ZZ)
Outputs (Q)
High-Z
DON'T CARE
Notes: 21. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device. 22. DQs are in high-Z when exiting ZZ sleep mode.
Document #: 38-05521 Rev. *D
Page 14 of 17
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CY7C1338G
Ordering Information
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered. Speed (MHz) 133 Ordering Code CY7C1338G-133AXC CY7C1338G-133BGC CY7C1338G-133BGXC CY7C1338G-133AXI CY7C1338G-133BGI CY7C1338G-133BGXI 100 CY7C1338G-100AXC CY7C1338G-100BGC CY7C1338G-100BGXC CY7C1338G-100AXI CY7C1338G-100BGI CY7C1338G-100BGXI Package Diagram Part and Package Type Operating Range Commercial
51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free 51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free 51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free 51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free
lndustrial
Commercial
lndustrial
Package Diagrams
100-Pin TQFP (14 x 20 x 1.4 mm) (51-85050)
16.000.20 14.000.10
100 1 81 80
1.400.05
0.300.08
22.000.20
20.000.10
0.65 TYP.
30 31 50 51
121 (8X)
SEE DETAIL
A
0.20 MAX. 1.60 MAX. 0 MIN. SEATING PLANE 0.25 GAUGE PLANE STAND-OFF 0.05 MIN. 0.15 MAX.
NOTE: 1. JEDEC STD REF MS-026 2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 3. DIMENSIONS IN MILLIMETERS
0-7
R 0.08 MIN. 0.20 MAX.
0.600.15 0.20 MIN. 1.00 REF.
DETAIL
51-85050-*B
A
Document #: 38-05521 Rev. *D
0.10
R 0.08 MIN. 0.20 MAX.
Page 15 of 17
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CY7C1338G
Package Diagrams (continued)
119-Ball BGA (14 x 22 x 2.4 mm) (51-85115)
O0.05 M C O0.25 M C A B A1 CORNER O0.750.15(119X) O1.00(3X) REF. 1 A B C E F G 22.000.20 H J K L M N P R T U 10.16 19.50 20.32 1.27 D 2 34 5 6 7 7 6 5 4321 A B C D E F G H J K L M N P R T U
1.27 0.70 REF. A 3.81
12.00 B 2.40 MAX.
7.62 14.000.20
0.900.05
0.25 C
30 TYP.
0.15(4X) 0.15 C
51-85115-*B
SEATING PLANE
0.56
C 600.10
Intel and Pentium are registered trademarks and i486 is a trademark of Intel Corporation. All product and company names mentioned in this document may be the trademarks of their respective holders.
Document #: 38-05521 Rev. *D
Page 16 of 17
(c) Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
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CY7C1338G
Document History Page
Document Title: CY7C1338G 4-Mbit (128K x 32) Flow-Through Sync SRAM Document Number: 38-05521 REV. ** *A ECN NO. 224369 278513 Issue Date See ECN See ECN Orig. of Change RKF VBL New data sheet Deleted 66 MHz Changed TQFP to PB-Free TQFP in Ordering Info section Added PB-Free BG package Removed 117-MHz speed bin Modified Address Expansion balls in the pinouts for 100 TQFP and 119 BGA Packages as per JEDEC standards and updated the Pin Definitions accordingly Modified VOL, VOH test conditions Replaced `Snooze' with `Sleep' Replaced TBD's for JA and JC to their respective values on the Thermal Resistance table Removed comment on the availability of BG lead-free package Updated the Ordering Information by shading and unshading MPNs as per availability Converted from Preliminary to Final Changed address of Cypress Semiconductor Corporation on Page# 1 from "3901 North First Street" to "198 Champion Court" Removed IOS from Electrical Characteristics table on Page #8 Modified test condition from VIH < VDD to VIH < VDD Modified test condition from VDDQ < VDD to VDDQ < VDD Modified "Input Load" to "Input Leakage Current except ZZ and MODE" in the Electrical Characteristics Table Replaced Package Name column with Package Diagram in the Ordering Information table Replaced Package Diagram of 51-85050 from *A to *B Updated the Ordering Information table Added the Maximum Rating for Supply Voltage on VDDQ Relative to GND. Updated the Ordering Information table. Description of Change
*B
333626
See ECN
SYT
*C
418633
See ECN
RXU
*D
480368
See ECN
VKN
Document #: 38-05521 Rev. *D
Page 17 of 17
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